Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Within the framework of the effective-mass approximation, the exciton states and interband optical transitions in In_xGa_1−xN/GaN strained quantum dot (QD) nanowire heterostructures are investigated using a variational method, in which the important built-in electric field (BEF) effects, dielectric-constant mismatch and three-dimensional confinement of the electron and hole in In_xGa_1−xN QDs are considered. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the exciton oscillator strength.     

K_2CdSnS_4的溶剂热合成与晶体结构(英文)

利用溶剂热法合成了层状硫代锡(Ⅲ)酸镉(Ⅱ)化合物K2CdSnS4。单晶X-射线衍射分析结果表明,化合物属单斜晶系,C2/c空间群,a=1.102 1(5)nm,b=1.103 0(5)nm,c=1.515 1(10)nm,α=90°,β=100.416(12)°,γ=90°,V=1.811 4(17)nm3,Z=8,Dc=3.209 g·cm-3,Mr=437.60,μ=6.853 mm-1,F(000)=1 600,λ=0.071 073 nm,R=0.104 2,wR=0.200 8。该化合物由类金刚烷[Cd2Sn2S10]8-结构单元互相连接形成层状结构。紫外-可见漫反射光谱研究表明,化合物为半导体,带隙为2.2 eV。     

带裂纹的椭圆孔口问题的应力分析

断裂现象与材料和结构中的孔洞、缺口或裂纹等缺陷密切相关,这是因为缺陷附近的应力集中明显.该文利用复变方法,通过保角映射研究了带裂纹的椭圆孔洞的平面弹性问题,给出了应力强度因子的解析解.并由此计算了两互相垂直的裂纹问题.     

Theoretical Study on the Structural and Optoelectronic Properties of the Linear Perfluorooctane Sulfonate （PFOS）

The perfluoroalkyl substances(PFS) have attracted considerable attention in recent years as a persistent global pollutant to be able to bioaccumulate in higher organisms.In this paper,theoretical analysis on electronic structures,optoelectronic properties and absorption spectra properties of the perflurooctane sulfonate(PFOS) in gas phase have been investigated by using the DFT/TD-DFT method.The geometric structures,electrostatic potentials,energy gaps,ionization potentials,electron affinities,frontier molecular orbital,excitation energies and absorption spectra for the ground state of PFOS were calculated.The result indicates that the ability of accepting electron of neutral PFOS is larger than that of anionic PFOS,while the electron excited by UV irradiation from HOMO to LUMO in the anionic PFOS is easier than that in the neutral PFOS.     

含铜MCM-48催化剂上糠醛选择性加氢制糠醇

 以MCM-48为载体,采用新颖的负载方法(有机官能团化法)制备了铜基负载型催化剂. 结果表明,活性组分以较高的负载量均匀地分散在载体MCM-48表面,且负载活性组分后,分子筛的结构未被明显破坏. 本文首次将采用此负载方法制备的铜基MCM-48催化剂用于糠醛选择性加氢制糠醇反应,并得到了较高的活性、稳定性及糠醇选择性,该催化剂可以与商业催化剂相比,具有潜在的工业应用价值. 与一维结构的MCM-41相比,三维孔道结构的MCM-48有效避免了孔堵塞,大大提高了催化剂的稳定性. 引入助剂镧有利于羰基加氢,明显提高了糠醛的转化率. 使用后的催化剂并未被氧化,催化剂失活的主要原因之一是积炭.     

A dual band CMOS VCO with a balanced duty cycle buffer

This paper proposes a dual band VCO with a standard 0.35 μm CMOS process to generate 1.07 and 2.07 GHz. The proposed VCO architecture with 50% duty cycle circuit and a half adder (HA) is able to produce a frequency two times higher than that of the conventional VCOs. The measurement results demonstrate that the gain of VCO and power dissipation are 561 MHz/V and 14.6 mW, respectively. The phase noises of the dual band VCO are measured to be −102.55 and −95.88 dBc/Hz at 2 MHz offset from 1.07 and 2.07 GHz, respectively.     

LO-phonon effect on the exciton binding energy in polar rectangular quantum wires

Longitudinal optical phonon effect on Wannier excitons in polar rectangular quantum wires is studied by a variational approach. The binding energy is calculated and the numerical results for several II-VI and III-V compound semiconductor rectangular quantum wires are given. The results show that the phonon effect reduces the binding energy and cannot be neglected. The phonon contribution to the binding energy is sensitive to the size of the rectangular quantum wire section, and increases with decreasing section area. The results for the GaAs rectangular quantum wires coincide with the experimental results. The calculated binding energy and the phonon effect in II-VI QWWs are both stronger than those in III-V compound systems, and the results for ZnSe QWW are qualitatively in agreement with the experiments.     

Constructing infinite sequence exact solutions of nonlinear evolution equations

To construct the infinite sequence new exact solutions of nonlinear evolution equations and study the first kind of elliptic function, new solutions and the corresponding Bäcklund transformation of the equation are presented. Based on this, the generalized pentavalent KdV equation and the breaking soliton equation are chosen as applicable examples and infinite sequence smooth soliton solutions, infinite sequence peak solitary wave solutions and infinite sequence compact soliton solutions are obtained with the help of symbolic computation system Mathematica. The method is of significance to search for infinite sequence new exact solutions to other nonlinear evolution equations.     

电场和应力作用下氮钝化扶手型氧化锌纳米带的电子结构和磁特性

采用密度泛函理论(DFT)方法,在LDA+U水平下详细研究了电场和应力作用下氮钝化扶手型氧化锌纳米带(NA8-ZnONRs)的电子结构和磁特性。对体系的电子结构和磁性进行详细的计算,结果表明：本征扶手型氧化锌纳米带(A8-ZnONRs)是无磁性P型半导体。氮钝化后NA8-ZnONRs具有铁磁金属性,其磁性主要来源于N2p轨道(2.56μ_B)和O2p轨道(0.69μ_B)电子的自旋极化,总磁矩为3.21μ_B。NA8-ZnONRs体系对X方向电场有较强的响应,通过调节X方向电场的幅度,可以有效调节体系的磁矩。在X方向电场作用下体系仍具有铁磁金属性,磁性也主要来源于N2p和O2p轨道电子的自旋极化。施加X方向应力作用后,体系仍表现为铁磁金属性。与NA8-ZnONRs纳米带磁矩相比,体系的总磁矩均发生了较大幅度的增长,表明体系对应力作用具有较明显的相应。但随着应力幅度的调节,总磁矩的变化较平坦。表明施加应力可以有效调节体系的磁矩,但在较小应力范围内,体系对应力变化的相应不明显。     

New application to Riccati equation

<正>To seek new infinite sequence of exact solutions to nonlinear evolution equations,this paper gives the formula of nonlinear superposition of the solutions and Backlund transformation of Riccati equation.Based on the tanhfunction expansion method and homogenous balance method,new infinite sequence of exact solutions to Zakharov-Kuznetsov equation,Karamoto-Sivashinsky equation and the set of(2+l)-dimensional asymmetric Nizhnik-Novikov-Veselov equations are obtained with the aid of symbolic computation system Mathematica.The method is of significance to construct infinite sequence exact solutions to other nonlinear evolution equations.